Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The physical properties and switching characteristics of amorphous $Ge_2Sb_2Te_5$ thin film

비정질 $Ge_2Sb_2Te_5$ 박막의 물리적 성질 및 스위칭 특성

  • Lee, Jae-Min (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Yang, Sung-Jun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Shin, Kyung (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • 이재민 (광운대학교 전자재료공학과) ;
  • 양성준 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2004.11.11
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Abstract

The phase transition from amorphous to crystalline states, and vice versa, of $Ge_2Sb_2Te_5$ films by applying electrical pulses have been studied. This material can be used as nonvolatile memory. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

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