Particle Image Velocimetry 기법을 이용하여, Chemical Mechanical Polishing 공정시 Slurry 유동장 측정

Measurement of the Slurry Flow-Field during Chemical Mechanical Polishing

  • 발행 : 2004.11.11

초록

Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some Previous works shows that RR is determined by production of pressure and velocity and NC is also largely affected by velocity of flow-field during CMP. This study is about the direct measurement of velocity of slurry during CMP and reconstruction whole flow-field by Particle Image Velocimetry(PIV) Techniques. Typical PIV system is tuned adequately for inspecting CMP and Slurry Flow-field is measured by changing both Pad RPM and Carrier RPM. The results show that velocity is majorly determined not by Carrier RPM, but by Pad RPM.

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