The Study on Thermal Stability of NiCr Thin-films

NiCr 박막의 어닐링과 열적안정성에 관한 연구

  • Kim, I.S. (KERI, Electric & Magnetic Devices Research Group) ;
  • Min, B.K. (KERI, Electric & Magnetic Devices Research Group) ;
  • Song, J.S. (KERI, Electric & Magnetic Devices Research Group)
  • 김인성 (한국전기연구원 전자기소자연구그룹) ;
  • 민복기 (한국전기연구원 전자기소자연구그룹) ;
  • 송재성 (한국전기연구원 전자기소자연구그룹)
  • Published : 2004.11.11

Abstract

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

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