Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
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- Pages.409-412
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- 2004
Reverse Characteristics of Field Plate Edge Terminated SiC Schottky Diode with $SiO_2$ formed Various Methods
산화막 형성 방법에 따른 전계판 구조 탄화규소 쇼트키 다이오드의 역전압 특성
- Bahng, W. (KERI) ;
- Cheong, H.J. (DongEui Univ) ;
- Kim, N.K. (KERI) ;
- Kim, S.C. (KERI) ;
- Seo, K.S. (KERI) ;
- Kim, H.W. (KERI) ;
- Cheong, K.Y. (KERI) ;
- Kim, E.D. (KERI)
- 방욱 (한국전기연구원) ;
- 정희종 (동의대학교) ;
- 김남균 (한국전기연구원) ;
- 김상철 (한국전기연구원) ;
- 서길수 (한국전기연구원) ;
- 김형우 (한국전기연구원) ;
- 청콴유 (한국전기연구원) ;
- 김은동 (한국전기연구원)
- Published : 2004.07.05
Abstract
Edge termination technique is essential fer the fabrication of high volage devices. A proper edge termination technique is also needed in the fabrication of Silicon Carbide power devices for obtaining a stable high blocking voltage properties. Among the many techniques, the field plate formation is the easiest one that can utilize it for commercial usage. The growth of thick thermal oxide is difficult for SiC, however. In this paper, 6A grade SiC schottky barrier diodes(SBD) were fabricated with field plate edge termination. The oxides which is field plate were formed various methods such as dry oxidation, 10%