Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
- /
- Pages.313-316
- /
- 2004
Characteristic of Addition Oxidizer on the $WO_3$ Thin Film CMP
산화제 첨가에 따른 $WO_3$ 박막의 CMP 특성
- Lee, Woo-Sun ;
- Ko, Pi-Ju ;
-
Choi, Kwon-Woo
;
- Kim, Tae-Wan ;
-
Choi, Chang-Joo
;
- Oh, Geum-Koh ;
- Seo, Yong-Jin
- 이우선 (조선대학교 전기공학과) ;
- 고필주 (조선대학교 전기공학과) ;
-
최권우
(조선대학교 전기공학과) ;
- 김태완 (조선대학교 전기공학과) ;
-
최창주
(조선대학교 전기공학과) ;
- 오금곤 (조선대학교 전기공학과) ;
- 서용진 (대불대학교 전기전자공학과)
- Published : 2004.07.05
Abstract
Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of