한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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산소 가스를 이용한 산화아연의 전자 농도와 광발광 세기 조절

Control of electron concentration and photoluminescence intensity of ZnO thin films using oxygen gas

  • 발행 : 2004.07.05
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초록

The electron concentration of ZnO thin film fabricated by pulsed laser deposition was controlled by varying oxygen gas pressure. The electron concentration of ZnO was increased from $10^{17}\;to\;10^{19}/cm^3$ as oxygen gas pressure increased from 20 mTorr to 350 mTorr. Ultraviolet(UV) intensity of photoluminescence of ZnO was controlled, too. UV intensity of ZnO was increased as oxygen gas pressure increased from 20 mTorr to 350 mTorr. The relation between electron concentration and UV intensity was investigated.

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