Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07a
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- Pages.150-153
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- 2004
A Study on Behavior of Deep Levels for AlGaAs Epi-layers using DLTS
DLTS를 이용한 AlGaAs 에피층의 깊은준위 거동에 관한 연구
- Choi, Young-Chul (Dept. of Electronic Material Engineering, Kwangwoon University) ;
- Park, Young-Ju (Nano Device Research Center, Korea Institute of Science and Technology) ;
- Kim, Tae-Geun (Dept. of Electronic Material Engineering, Kwangwoon University)
- Published : 2004.07.05
Abstract
본 논문에서는 780 nm 고출력 레이저 다이오드의 신뢰성을 향상시키기 위하여 DLTS(deep level transient spectroscopy)을 이용하여 MOCVD(metalorganic chemical vapor deposition) 성장 조건 변화에 따른