Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Effect of Re-nitridation on Plasma-Enhanced Chemical-Vapor Deposited $SiO_2/Thermally-Nitrided\;SiO_2$ Stacks on N-type 4H SiC

  • Cheong, Kuan Yew (Power Semiconductor Research Group, Korea Electrotechnology Research Institute(KERI)) ;
  • Bahng, Wook (Power Semiconductor Research Group, Korea Electrotechnology Research Institute(KERI)) ;
  • Kim, Nam-Kyun (Power Semiconductor Research Group, Korea Electrotechnology Research Institute(KERI)) ;
  • Na, Hoon-Ju (Materials Science Division, Seoul National University)
  • 청콴유 (한국전기연구원 전력반도체연구그룹) ;
  • 방욱 (한국전기연구원 전력반도체연구그룹) ;
  • 김남균 (한국전기연구원 전력반도체연구그룹) ;
  • 나훈주 (서울대학교 재료공학부)
  • Published : 2004.07.05
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Abstract

In this paper the importance of re-nitridation on a plasma-enhanced chemical-vapor deposited(PECVD) $SiO_2$ stacked on a thermally grown thin-nitrided $SiO_2$ on n-type 4H SiC have been investigated. Without the final re-nitridation process, the leakage current of metaloxidesemiconductor(MOS) was extremely large. It is believed that water and carbon, contamination from the low-thermal budget PECVD process, are the main factors that destroyed the high quality thin-buffer nitrided oxide. After re-nitridation annealing, the quality of the stacked gate oxide was improved. The reasons of this improvement are presented.

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