Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)
- 2004.12a
- /
- Pages.171-172
- /
- 2004
- /
- 2233-9485(pISSN)
- /
- 2233-9574(eISSN)
Gate effect on Hall voltage in a Hybrid InSb/Ferromagnet device
- Kim W. Y. (Nano Device Research Center, Korea Institute of Science and Technology) ;
- Chang Joonyeon (Nano Device Research Center, Korea Institute of Science and Technology) ;
- Han S. H. (Nano Device Research Center, Korea Institute of Science and Technology) ;
- Chang S. G. (Epixon CO., Ltd) ;
- Lee W. Y. (Department of Materials Science and Engineering, Yonsei University)
- Published : 2004.12.01
Abstract
Keywords