Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2004.06b
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- Pages.391-394
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- 2004
Thermal Stability Improvement or Ni Germanosilicide Using NiPt/Co/TiN and the Effect of Ge Fraction (x) in $Si_{l-x}Ge_x$
NiPt/Co/TiN을 이용한 Ni Germanosilicide 의 열안정성 향상 및 Ge 비율 (x) 에 따른 특성 분석
- Yun Jang-Gn (Dept. of Electronics Engineering, Chungnam National University) ;
- Oh Soon-Young (Dept. of Electronics Engineering, Chungnam National University) ;
- Huang Bin-Feng (Dept. of Electronics Engineering, Chungnam National University) ;
- Kim Yong-Jin (Dept. of Electronics Engineering, Chungnam National University) ;
- Ji Hee-Hwan (Dept. of Electronics Engineering, Chungnam National University) ;
- Kim Yong-Goo (Dept. of Electronics Engineering, Chungnam National University) ;
- Cha Han-Seob (System IC R & D Division. Hynix Semiconductor Inc.) ;
- Heo Sang-Bum (System IC R & D Division. Hynix Semiconductor Inc.) ;
- Lee Jeong-Gun (System IC R & D Division. Hynix Semiconductor Inc.) ;
- Wang Jin-Suk (Dept. of Electronics Engineering, Chungnam National University) ;
- Lee Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
- 윤장근 (충남대학교, 전자공학과) ;
- 오순영 (충남대학교, 전자공학과) ;
- 황빈봉 (충남대학교, 전자공학과) ;
- 김용진 (충남대학교, 전자공학과) ;
- 지희환 (충남대학교, 전자공학과) ;
- 김용구 (충남대학교, 전자공학과) ;
- 차한섭 (하이닉스 반도체, 시스템 IC R & D 부) ;
- 허상범 (하이닉스 반도체, 시스템 IC R & D 부) ;
- 이종근 (하이닉스 반도체, 시스템 IC R & D 부) ;
- 왕진석 (충남대학교, 전자공학과) ;
- 이희덕 (충남대학교, 전자공학과)
- Published : 2004.06.01
Abstract
In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in
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