Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2004.06b
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- Pages.375-378
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- 2004
Pentacene TFT's Characteristic depending on the Density of PVP Gate Insulator
PVP 게이트 절연체의 농도에 대한 펜타센 TFT의 특성 변화
- Byun Hyun-Sook (Division of Electrical and Electronics and Computer Engineering Dong-A University) ;
- Xu Yong-Xian (Division of Electrical and Electronics and Computer Engineering Dong-A University) ;
- Jung Hyun (Division of Electrical and Electronics and Computer Engineering Dong-A University) ;
- Hwang Sung-Beam (Division of Electrical and Electronics and Computer Engineering) ;
- Song Chung-Kun (Division of Electrical and Electronics and Computer Engineering Dong-A University)
- Published : 2004.06.01
Abstract
In this paper, we fabricated pantacene TFTs using PVP copolymer and cross-linked PVP as gate insulator on glass and plastic (PET) substrate. Depending on the density of PVP and poly (melamine-co-formaldehyde) the performance has been changed. We obtained the best performance with the mobility of 0.12cm2/V sec and the on/off current ratio of
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