Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Design and Fabrication of RESURF type SOI n-LDMOSFET

RESURF type의 SOI n-LDMOSFET 소자 설계 및 제작

  • Kim, Jae-Seok (Dept. of Electronic Engineering, Sogang University) ;
  • Kim, Beom-Ju (Dept. of Electronic Engineering, Sogang University) ;
  • Koo, Jin-Gen (ETRI-Electronics and Telecommunications Research Institute) ;
  • Koo, Yong-Seo (Dept. of Electronic Engineering, Seokyeong University) ;
  • An, Chul (Dept. of Electronic Engineering, Sogang University)
  • 김재석 (서강대학교 전자공학과) ;
  • 김범주 (서강대학교 전자공학과) ;
  • 구진근 (한국전자통신연구원) ;
  • 구용서 (서경대학교 전자공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 2004.06.01
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Abstract

In this work, N-LDMOSFET(Lateral Double diffused MOSFET) was designed and fabricated on SOI(Silicon-On-Insulator) substrate, for such applications as motor controllers and high voltage switches, fuel injection controller systems in automobile and SSR(Solid State Rexay)etc. The LDMOSFET was designed to overcome the floating body effects that appear in the conventional thick SOI MOS structure by adding p+ region in source region. Also, RESURF(Reduced SURface Field) structure was proposed in this work in order to reduce a large on-resistance of LDMOSFET when operated keeping high break down voltage. Breakdown voltage was 268v in off-state ($V_{GS}$=OV) at room temperature in $22{\mu}m$ drift length LDMOSFET. When 5V of $V_{GS}$ and 30V of $V_{DS}$ applied, the on resistance(Ron), the transcon ductance($G_m$) and the threshold voltage($V_T$) was 1.76k$\Omega$, 79.7uA/V and 1.85V respectively.

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