Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Characteristic of $WO_3$ Thin Film CMP

$WO_3$ Thin Film의 CMP 특성

  • 고필주 (조선대학교 전기공학과) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 최권우 (조선대학교 전기공학과) ;
  • 김태완 (조선대학교 전기공학과) ;
  • 서용진 (대불대학교 전기전자공학과)
  • Published : 2004.07.14
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Abstract

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP precess, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

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