한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

실리콘 나노결정 박막의 후열처리 효과 연구

Annealing effect of Si nanocrystallites thin films

  • 전경아 (연세대학교 전기전자공학과) ;
  • 김종훈 (연세대학교 전기전자공학과) ;
  • 최진백 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Jeon, Kyung-Ah (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Jong-Hoon (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Choi, Jin-Baek (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
  • 발행 : 2003.04.19
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Si nanocrystallites thin films have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperature range of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas ($95%N_{2}+5%H_{2}$) at $500^{\circ}C$. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. As a result of photoluminescence spectra and infrared absorption spectra, we conclude that the violet-indigo PL efficiency is related with oxygen vacancy in the $SiO_x$(x= 1.6-1.8) matrix.

키워드