한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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- Pages.75-81
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- 2003
ZnO 박막의 증착 두께에 따른 Photon Energy 특성에 관한 연구
A Study on the Photon Energy Characteristics of ZnO Thin Film According to Coating Thickness
- 발행 : 2003.05.16
초록
This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant
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