Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.05b
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- Pages.27-30
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- 2003
700V Emitter Switched Thyristor(EST) with Dual Trench Gate
700V급 듀얼 트랜치 게이트를 가지는 Emitter Switched Thyristor(EST)
- Kim, Dae-Won (Korea University) ;
- Sung, Man-Young (Korea University) ;
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Kang, Ey-Goo
(Far East University)
- Published : 2003.05.16
Abstract
In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and