Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.05d
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- Pages.105-108
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- 2003
Annealing effects of CMP slurry abrasives
CMP 슬러리 연마제의 어닐링 효과
- Park, Chang-Jun (DAEBUL University) ;
- Jeong, So-Young (DAEBUL University) ;
- Kim, Chul-Bok (DONGSUNG A&T) ;
- Choi, Woon-Shik (DAEBUL University) ;
- Seo, Yong-Jin (DAEBUL University)
- Published : 2003.05.30
Abstract
CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.
Keywords
- CMP(chemical mechanical polishing);
- COO(cost of ownership);
- Annealing;
- abrasive;
- COC(cost of consumables)