The Synthesis of Diamond/WC-Co Thin Film by HE-CVD

HE-CVD법에 의한 Diamond/WC-Co 박막합성

  • Lee, Kee-Sun (Division of Advanced Materials Engineering, Kongju National University) ;
  • Seo, Sung-Man (Division of Advanced Materials Engineering, Kongju National University) ;
  • Shin, Dong-Uk (Division of Advanced Materials Engineering, Kongju National University) ;
  • Kim, Dong-Sun (Department of Chemical Engineering, Kongju National University)
  • Published : 2003.10.15

Abstract

The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

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