한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.622-625
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- 2003
Dependence of Stress-Induced Leakage Current on Low Temperature Polycrystalline Silicon TFTs
- Chen, Chih-Chiang (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI)) ;
- Chang, Jiun-Jye (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI)) ;
- Chuang, Ching-Sang (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI)) ;
- Wu, Yung-Fu (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI)) ;
- Sheu, Chai-Yuan (Electronics Research and Service Organization/lndustrial Technology Research Institute (ERSO/ITRI))
- Published : 2003.07.09
Abstract
The dependence of stress-induced leakage current on LTPS TFTs was characterized in this study. The impacts of poly-Si crystallization, gate insulator, impurity activation, hydrogenation process and electrostatic discharge damage were investigated. It was observed more TFTs instable characteristic under those process-assisted processes. According to the LTPS roadmap, smaller geometric and low temperature process were the future trend and the stress-induced leakage current should be worthy of remark.
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