한국정보디스플레이학회:학술대회논문집
- 2003.07a
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- Pages.237-240
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- 2003
High Performance TFTs Fabricated Inside a Location-Controlled Grain by Czochralski (grain-filter) Process
- Rana, Vikas (Delft Institute of Microelectronics and Submicrontechnology (DIMES) Delft Univ. of Technol.) ;
- Ishihara, Ryoichi (Delft Institute of Microelectronics and Submicrontechnology (DIMES) Delft Univ. of Technol.) ;
- Metselaar, J.W. (Delft Institute of Microelectronics and Submicrontechnology (DIMES) Delft Univ. of Technol.) ;
- Beenakker, C.I.M. (Delft Institute of Microelectronics and Submicrontechnology (DIMES) Delft Univ. of Technol.) ;
- Hiroshima, Yasushi (Technology Platform Research Center, Seiko-Epson Corp.) ;
- Abe, Daisuke (Technology Platform Research Center, Seiko-Epson Corp.) ;
- Higashi, Seiichiro (Technology Platform Research Center, Seiko-Epson Corp.) ;
- Inoue, Satoshi (Technology Platform Research Center, Seiko-Epson Corp.) ;
- Shimoda, Tatsuya (Technology Platform Research Center, Seiko-Epson Corp.)
- Published : 2003.07.09
Abstract
This paper reports the characteristics of TFTs, formed inside a location-controlled grain: "single-crystalline" Si TFTs (c-Si TFTs). Position of the grains were controlled with a great precision by "
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