한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

칼코게나이드 박막에서의 conductivity 변화에 관한 연구

The study of conductivity transition on chalcogenide thin films

  • 양성준 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 박정일 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Yang, Sung-Jun (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Shin, Kyung (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Park, Jung-Il (Department of Electronic Materials Eng. Kwangwoon Univ.) ;
  • Chung, Hong-Bay (Department of Electronic Materials Eng. Kwangwoon Univ.)
  • 발행 : 2003.11.13
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초록

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. $T_c$(crystallization temperature) is confirmed by measuring the conductivity with the varying temperature. The sample is heated on the hotplate and slow down to the room-temperature. We prepared Te based alloy bulk. The materials can be used for nonvolatile random access memory.

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