한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

열선 CVD법에 의한 다결정 실리콘 박막증착 및 특성분석

Poly-Si Thin Films by Hot-wire Chemical Vapor Deposition Method

  • 정연식 (한국에너지기술연구원 태양광연구센터) ;
  • 이정철 (한국에너지기술연구원 태양광연구센터) ;
  • 김석기 (한국에너지기술연구원 태양광연구센터) ;
  • 윤경훈 (한국에너지기술연구원 태양광연구센터) ;
  • 송진수 (한국에너지기술연구원 태양광연구센터) ;
  • 박이준 (한국에너지기술연구원 태양광연구센터) ;
  • 권성원 (한국과학기술원) ;
  • 임굉수 (한국과학기술원)
  • 발행 : 2003.07.10
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초록

This paper presents the deposition characterization of polycrystalline silicon films by the HWCVD(Hot-wire Chemical Vapor Deposition) method at low substrate($300^{\circ}C$). The filament temperature, pressure and $SiH_4$ concentration were determined to be a critical parameter for the deposition of poly-Si films. Series A was deposited under the conditions of $1380^{\circ}C$(Tf), 100 mTorr and $2{\sim}10%\{SiH_4/(SiH_4+H_2)\}$ for 60 min. Series B was deposited under the conditions of $1400{\sim}1450^{\circ}C$ (Tf), 30 mTorr and $2{\sim}12%$ for 60 min. The physical characteristics were measured by Raman and FTIR spectroscopy, dark and photoconductivity measurements under AM1.5 illumination.

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