Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dielectric Characteristics of Carbon Nitride Films on Quartz Substrate

석영기판에 증착된 질화탄소막의 유전특성

  • Ha, Se-Geun (Department of Electrical and Electronic Engineering, Kyungnam Univ.) ;
  • Lee, Ji-Gong (Department of Electrical and Electronic Engineering, Kyungnam Univ.) ;
  • Lee, Sung-Pil (Department of Electrical and Electronic Engineering, Kyungnam Univ.)
  • 하세근 (경남대학교 전기전자공학부) ;
  • 이지공 (경남대학교 전기전자공학부) ;
  • 이성필 (경남대학교 전기전자공학부)
  • Published : 2003.07.10
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Abstract

Carbon nitride($CN_x$) thin films were deposited on quartz substrates using reactive RF magnetron sputtering system at uarious deposition conditions and investigated dielectric characteristics. Samples for capacitance measurements were of the MIM(Metal-Insulator-Metal) type devices. Aluminum film electrodes were prepared by a vacuum thermal evaporation method before and after the deposition of carbon nitride films. Capacitances were measured by a FLUKE PM6306 RCL Meter at room temperature. Current-voltage(I-V) characteristics and resistivity were measured by a CATS CA-EDA semiconductor test and analyzer. The carbon nitride films showed ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ etc. peaks through Raman and FTIR. Observed surface of film and side structure using SEM(Scanning Electron Microscope), and measured thickness of film by ${\alpha}-step$. We can find that the dielectric constant was the lowest value in 50% nitrogen ratio and the resistivity was the highest value in 70% nitrogen ratio.

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