Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07b
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- Pages.834-837
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- 2003
Ohmic Characteristics of TiN/3C-SiC for High-temperature MEMS Applications
초고온 MEMS용 TiN/3C-SiC의 Ohmic 특성
- Jung, Su-Yong (School of Information System Eng. Dongseo Univ.) ;
- Woo, Hyung-Soon (School of Information System Eng. Dongseo Univ.) ;
- Kim, Gue-Hyun (School of Applied Eng. Dongseo Univ.) ;
- Chung, Gwiy-Sang (School of Information System Eng. Dongseo Univ.)
- Published : 2003.07.10
Abstract
In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to