Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
- /
- Pages.374-377
- /
- 2003
Excess Carrier Distribution of PT IGBT at Turn on
PT IGBT의 Turn-on시 과잉캐리어 분포 특성
- Lee, Jung-Suk (Konkuk Univ.) ;
- Park, Ji-Hong (Konkuk Univ.) ;
-
Ahn, Hyung-Keun
(Konkuk Univ.)
;
-
Han, Deuk-Young
(Konkuk Univ.)
- 이정석 (건국대학교 전기공학과 재료 연구실) ;
- 박지홍 (건국대학교 전기공학과 재료 연구실) ;
-
안형근
(건국대학교 전기공학과 재료 연구실)
;
-
한득영
(건국대학교 전기공학과 재료 연구실)
- Published : 2003.07.10
Abstract
In this paper, turn on characteristics of (Punch-Through Insulated Gate Bipolar Transistor) PT-IGBT has been studied. Based on the transient power loss, turn on charges first base to collector capacitance. Furthermore we present the charge variation in the base including n+ buffer layer to express the transient turn-on characteristics of the device.