한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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- Pages.339-342
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- 2003
구리 CMP 슬러리중 산화제의 부식 특성
Corrosion Characteristics by Oxidizers for Copper CMP Slurry
- Lee, Do-Won (Chung-Ang University) ;
- Kim, In-Pyo (Chung-Ang University) ;
- Kim, Nam-Hoon (Chung-Ang University) ;
- Kim, Sang-Yong (Dongbu-Anam Semiconductor) ;
- Kim, Tae-Hyung (Yeojoo Institute of Technology) ;
- Chang, Eui-Goo (Chung-Ang University)
- 발행 : 2003.07.10
초록
The corrosion characteristics of Copper by oxidizers in Cu CMP slurry has been investigated. Key experimental variables that has been investigate are the corrosion rate by different oxidizers containing slurry of Cu CMP. Oxidizers in Cu CMP slurry reacts with Cu surfaces to raise the oxidation state of the metal via a reduction-oxidation reaction, resulting in either dissolution of the Cu or the formation of Ta surface film on the metal.[1] When Cu films were corroded adding each oxidizer, corrosion rate increased as much as higher Icorrosion. The corrosion rate of Cu was the largest as added