한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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- Pages.185-190
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- 2003
VDP(Vapor Deposition Polymerization) 방법을 이용한 유기 게이트 절연막의 대한 연구
Study on the Organic Gate Insulators Using VDP Method
- Pyo, Sang-Woo (Hongik Univ.) ;
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Shim, Jae-Hoon
(Hongik Univ.) ;
- Kim, Jung-Soo (Hongik Univ.) ;
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Kim, Young-Kwan
(Dept. of Chemical Eng., Hongik Univ.)
- 발행 : 2003.07.10
초록
In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at