한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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- Pages.84-87
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- 2003
HgTe 양자점의 광전류 특성
Photocurrent of HgTe Quantum Dots
- 김현석 (고려대학교 전기공학과) ;
- 김진형 (고려대학교 전기공학과) ;
- 이준우 (고려대학교 전기공학과) ;
- 송현우 (고려대학교 전기공학과) ;
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조경아
(고려대학교 전기공학과) ;
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김상식
(고려대학교 전기공학과)
- Kim, Hyun-Suk (Department of Electrical Engineering, Korea Univ.) ;
- Kim, Jin-Hyoung (Department of Electrical Engineering, Korea Univ.) ;
- Lee, Joon-Woo (Department of Electrical Engineering, Korea Univ.) ;
- Song, Hyun-Woo (Department of Electrical Engineering, Korea Univ.) ;
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Cho, Kyoun-Gah
(Department of Electrical Engineering, Korea Univ.) ;
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Kim, Sang-Sig
(Department of Electrical Engineering, Korea Univ.)
- 발행 : 2003.07.10
초록
HgTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe QDs revealed the strong exitonic peak in the IR region. And the photocurrent measurement of colloidal QDs are performed using IR light source. The lineshape of the wavelength dependent intensity of photocurrent was very similar to the absorption spectrum, indicating the charges generated by the absorption of photons give direct contribution to photocurrent. The channels of dark current are supposed