Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)
- 2003.12a
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- Pages.192-199
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- 2003
A Study on Heat Transfer and Film Growth Rate During the III-V MOCVD Processes
- Ik Tae, Im ;
- MASAKAZU, SUGIYAMA (Dept. of Electronic Eng., University of Tokyo) ;
- VOSHIAKI, NAKANO (Dept. of Electronic Eng., University of Tokyo) ;
- YUKIHIRO, SHIMOGAKI (Dept of Materials Ing, University of Tokyo)
- Published : 2003.12.01
Abstract
Film growth of InP and GaAs using TMIn, TMGa, TBAs and TBP is numerically predicted and compared to the experimental results. To obtain exact thermal boundary conditions at the reactor walls, the gas flow and heat transfer are analyzed for full three-dimensional reactor including outer tube as well as the inner reactor parts. The results indicate that the exact thermal boundary conditions are important to get precise film growth rate prediction since film deposition is mainly controlled by the temperature dependent diffusion. The results also show that thermal diffusion plays an important role in the upstream region.
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