$p^+-cap$ 구조를 갖는 실리콘 pin 다이오드의 설계와 제작

New Si pin photodiodes with $p^+-cap$ region have been designed and fabricated for the application in a PDIC of the optical pick-up system. The fabricated devices were designed with the incident optical window of $120\mu\textrm{m}$ and were classified into three structures according to <$p^+-cap$ dimensions. As the result of experiments, the devices with the $p^+$-cap dimension of $0\mu\textrm{m}$(no cap), $65\mu\textrm{m}$, and $120\mu\textrm{m}$ showed the sensitivity of 1.0 A/W, 0.86 A/W, and 0.6 A/W, respectively.