Hydrodynamic Lubrication Model for Chemical Mechanical Planarization

유체윤활을 고려한 화학기계적 연마 공정에서의 연마대상과 패드 사이의 유동장 해석

The chemical mechanical planarization (CMP) process is a method of planarizing semiconductor wafers with a high degree of success. However, fundamental mechanisms of the process are not fully understood. Several theoretical analyses have been introduced, which are focused on kinematics, von Mises stress distributions and hydrodynamic lubrication aspects. This paper is concerned with hydrodynamic lubrication theory as the chemical mechanical planarization model; the three-dimensional Reynolds equation is applied to predict slurry film thickness and pressure distributions between the pad and the wafer. This paper classifies geometry of wafer into 3 types and focuses on the differences between them.