4" Si 웨이퍼에 대한 single-step UV 나노임프린트 리소그래피

Single-step UV nanoimprint lithography on a 4" Si wafer

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.