2T-2MTJ MRAM의 Sense Amplifier

Sense Amplifier for 2T-2MTJ MRAM

  • 홍승균 (중앙대학교 전자전기공학부) ;
  • 김인모 (중앙대학교 전자전기공학부) ;
  • 유혜승 (고려대학교 전자공학과) ;
  • 김수원 (고려대학교 전자공학과) ;
  • 송상헌 (중앙대학교 전자전기공학부)
  • 발행 : 2003.07.01

초록

This paper proposes a new Sense Amplifier for MRAM. Current Sense Amplifier employs a latch-type circuit to amplify a signal from the selected memory cell. The proposed Sense Amplifier simplifies the circuit by amplifying the signal using cross-coupled PMOS transistors. It shows the same operation speed as the latch-type Sense Amplifier in simulation and occupies only 85% of the area taken by the latch-type Sense Amplifier.

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