Restoration Characteristics along to Time of the Gate and Substrate Current in p-channel MOSFETS

P-채널 MOSFET에서 게이트와 기판 전류의 시간에 따른 복원 특성

In this paper, we analyzed the gate current and substrate current by the hot carrier effects and restoration phenomenon of characteristics by time in the p-channel MOSFETs. The Stress voltage condition is a voltage in maximum gate current and time is 3s, 10s, 30s, l00s, 1000s, 2000s and 3000s. As results of analysis, the gate current and substrate current were decreased by stress time, and the restoration time of characteristics were shown the results that were decreased by the exponential times.