Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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2D(Dimension) Quantum Mechanical Modeling and Simulation : FinFET

2차원 양자 역학적 모델링 및 시뮬레이션 : FinFET

  • 김기동 (인하대학교 전기공학과 고속전자소자연구실) ;
  • 권오섭 (인하대학교 전기공학과 고속전자소자연구실) ;
  • 서지현 (인하대학교 전기공학과 고속전자소자연구실) ;
  • 원태영 (인하대학교 전기공학과 고속전자소자연구실)
  • Published : 2003.07.01
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Abstract

In this paper, we report our quantum mechanical approach for the analysis of FinFET in a self-consistent manner. The simulation results are carefully investigated for FinFET with an electrical channel length(Leff) of 30nm and with a fin thickness(Tsi) of 10～35nm. We also demonstrated the differences in the simulations for the classical and quantum-mechanical simulation approaches, respectively. These simulation results also imply that it is necessary to solve the coupled Poisson and Schrodinger equations in a self-consistent manner for analyzing the sub-30nm MOSFETS including FinFET.

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