Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.07b
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- Pages.763-766
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- 2003
A Parameter Extraction Method for BJT Gummel-Poon Model
BJT Gummel-Poon 모델 파라미터 추출 방법
Abstract
A direct parameter extraction method using several two-port parameter equations derived in cutoff and active bias modes has been studied to obtain an accurate Gummel-Poon BJT model. First, dc model parameters were extracted from slopes and y-axis intercepts of I-V curve and Gummel plot. The pad capacitances and junction capacitance parameters were determined by using measured S-parameter sets in the cutoff bias. The resistance and transit time parameters were extracted by using measured S-parameter sets in the active bias.
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