대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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- Pages.731-734
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- 2003
Kinetic Monte Carlo Simulations for Defects Diffusion in Ion-implanted Crystalline
- Jihyun Seo (Computational Electronics Center and Division of Electrical Engineering, Inha University) ;
- Hwang, Ok-Chi (Computational Electronics Center and Division of Electrical Engineering, Inha University) ;
- Ohseob Kwon (Computational Electronics Center and Division of Electrical Engineering, Inha University) ;
- Kim, Kidong (Computational Electronics Center and Division of Electrical Engineering, Inha University) ;
- Taeyoung Won (Computational Electronics Center and Division of Electrical Engineering, Inha University)
- 발행 : 2003.07.01
초록
An atomistic process modeling, Kinetic Monte Carlo simulation, has the advantage of being both conceptually simple and extremely powerful. Instead of diffusion equations, it is based on the definitions of the interactions between individual atoms and defects. Those interactions can be derived either directly from molecular dynamics, first principles calculations, or from experiment. In this paper, as a simple illustration of the kinetic Monte Carlo we simulate defects (self-interstitials and vacancies) diffusion after ion implantation in Si crystalline.
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