한국소성가공학회:학술대회논문집 (Proceedings of the Korean Society for Technology of Plasticity Conference)
- 한국소성가공학회 2003년도 추계학술대회논문집
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- Pages.339-346
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- 2003
분자동역학을 이용한 나노 인덴테이션과 상변화 해석 연구
Molecular Dynamic Simulation of Nano Indentation and Phase Transformation
초록
Molecular dynamic simulations of nano indentation on single-crystal silicon (100) surface were performed using diamond indentor. Silicon substrate and diamond indentor were modeled diamond structure with Tersoff potential model. Phase transformation of silicon, incipient plastic deformation, change of incident temperature distribution are investigated through the change of potential energy distribution, displacement-load diagram, the change of kinetic energy distribution and displacements of silicon atoms. Phase transformation is highly localized and consists of a high-density region surrounding the tip. Axial load linearly increased according to the indenting depth. Number of atoms with high kinetic energy increased at the interface between substrate and indentor tip.