한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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- Pages.136-136
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- 2003
Er이 도핑된 졸-겔 코팅막의 발광특성
Near IR Luminescence Properties of Er-doped Sol-Gel Films
- Lim, Mi-Ae (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
- Seok, Sang-Il (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
- Kim, Ju-Hyeun (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
- Ahn, Bok-Yeop (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
- Kwon, Jeong-Oh (Advanced Materials Division, Korea Research Institute of Chemical Technology)
- 발행 : 2003.11.01
초록
In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped
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