SLS 성장방법에 의한 SiC 나노와이어의 성장

Growth of SiC nanowires by SLS growth mechanism

  • 노대호 (고려대학교 재료공학과) ;
  • 김재수 (한국과학기술연구원 금속공정연구센터) ;
  • 변동진 (고려대학교 재료공학과) ;
  • 진정근 (고려대학교 재료공학과) ;
  • 김나리 (고려대학교 재료공학과) ;
  • 양재웅 (대진대학교 신소재공학과)
  • 발행 : 2003.11.01

초록

Most of all nano-structures, SiC had a high electrical conductivity and mechanical strengths ay high temperatures. So It was considered a useful materials for nanosized device materials and added materials for strength hardening. Much methods were developed for SiC nanowire and nanorods like CVD, carbothermal reduction, Laser ablation and CNT-confined reduction. These methods used the VLS (Vapor-Liquid-Solid) growth mechanism. In these experiments, SiC nanowire was grown by SLS (Sold-Liquid-Solid) growth mechanism used Graphite substrate, And we characterized its microstructure to compare with VLS growth mechanism.

키워드