Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)

Materials Research Society of Korea (한국재료학회)
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Electrical and magnetic properties of GaMnN with varying the concentrations of Mn and Mg

  • F.C. Yu (Department of Materials Engineering, Chungnam University) ;
  • Kim, K.H. (Department of Materials Engineering, Chungnam University) ;
  • Lee, K.J. (Department of Materials Engineering, Chungnam University) ;
  • H.S. Kang (Department of Materials Engineering, Chungnam University) ;
  • Kim, J.A. (Department of Materials Engineering, Chungnam University) ;
  • Kim, D.J. (Department of Materials Engineering, Chungnam University) ;
  • K.H. Baek (Department of Materials Engineering, Chungnam University) ;
  • Kim, H.J. (Department of Materials Engineering, Chungnam University) ;
  • Y.E. Ihm (Department of Materials Engineering, Chungnam University)
  • Published : 2003.05.01
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Abstract

III- V ferromagnetic semiconductor has attracted great attention as a potential application for spintronics due to a successful demonstration of spin injection from ferromagnetic GaNnAs into semiconductor. GaMnN may be one of the possible candidates for room temperature operation. Samples were grown on sapphire (0001) substrate at $650^{\circ}C$ via molecular beam epitaxy with a single Precursor of (Et$_2$Ga(N$_3$)NH$_2$$CH_3$) and solid source of Mn at different Mn source temperature. The background pressure is low 10$^{-10}$ Torr and the samples growth pressure was 1.4 $\times$ 10$^{-6}$ Torr.

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