Comparisons of the growth properties of Ce$O_{2}$ and $Y_{2}$$O_{3}$ buffer layers on Ni tapes

  • S. M. Lim (Physics Department, KAIST) ;
  • Kim, H. S. (Physics Department, KAIST) ;
  • D. Youm (Physics Department, KAIST)
  • 발행 : 2003.02.01

초록

The growth properties of $Y_2$O$_3$ and CeO$_2$ films for the buffer layers on Ni tapes were studied comparatively. The water vapor larger than 2$\times$10$^{-5}$ Torr and the substrate temperature higher than $700^{\circ}C$ were required for the proper growth of $Y_2$O$_3$ films, while the upper limits of the water vapor and the lower limit of the substrate temperatures for the proper growth of CeO$_2$ were 1$\times$10$^{-5}$ Torr and 50$0^{\circ}C$, respectively. These imply that the windows of the growth conditions of CeO$_2$ are wider than those of $Y_2$O$_3$. However the formation of cracks in CeO$_2$ films were its disadvantage, while $Y_2$O$_3$ showed no cracks. PACS. No 85.25.K, 81.15.A.

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