A Sol-Gel Growth of Oxide Buffer Layer for Coated Conductor

솔젤법에 의한 coated conductor용 산화물 완충층의 성장

  • 김영국 (한국기계연구원 재료연구부) ;
  • 유재무 (한국기계연구원 재료연구부) ;
  • 고재웅 (한국기계연구원 재료연구부) ;
  • 허순영 (한국기계연구원 재료연구부)
  • Published : 2003.02.01

Abstract

PbTiO$_3$ films applicable to buffer layers for YBCO coated conductor have been successfully fabricated by sol-gel process. Crystallinity of grown films are heavily dependent on processing parameters such as annealing atmosphere and number of dipping. (100) oreinted PbTiO$_3$ films grown on (200) oriented Ni substrates exhibit uniform surface with small grain size(200~300nm).

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