한국표면공학회:학술대회논문집 (Proceedings of the Korean Institute of Surface Engineering Conference)
- 한국표면공학회 2003년도 춘계학술발표회 초록집
- /
- Pages.53-53
- /
- 2003
PACVD of Plasma Polymerized Organic Thin Films and Comparison of their Electrochemical Properties
- I.S. Bae (Institute of Basic Science and Department of Chemistry, Sungkyunkwan University) ;
- S.H. Cho (Institute of Basic Science and Department of Chemistry, Sungkyunkwan University) ;
- Kim, M.C. (Institute of Basic Science and Department of Chemistry, Sungkyunkwan University) ;
- Y.H. Roh (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
- J.H. Boo (Institute of Basic Science and Department of Chemistry, Sungkyunkwan University)
- 발행 : 2003.05.01
초록
Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and
키워드