A multi-point sense amplifier for embedded SRAM

This paper describes new sense amplifier with fast sensing delay time of 0.54ns and 32kb CMOS embedded SRAM with 4.67ns access time for a 3-V powr supply. It was achieved using the sense amplifier with multiple point sensing scheme and high speed bit-line scheme. The sense amplifier saves 25% of the power dissipation compared with the conventional one while maintaining a very short sensing delay. The SRAM uses 0.5.mu.m double-polysilicon and triplemetal CMOS process technology. A die size is 1.78mm*2.13mm.