A study on latch-up immune structure by high energy ion implantation

고에너지 이온 주입을 이용한 latch-up 면역에 관한 구조 연구

This paper is concerned with researching latch-up immune CMOS structure was performed. By the simulation results, the connecting layer had more effect than the buried layer to latch-up immune. When the connecting layer was the dose 1*10$^{14}$ /cm$^{2}$ and the energy 500KeV, the trigger current was more 0.6mA/.mu.m and the trigger voltage was 6V. The more the connecting layer dose was lower, the more the latch-up immune characteristics was butter.