유도 결합 BCl$_{3}$/Cl$_{2}$ 플라즈마내에서 Pt 박막의 건식 식각

Dry etching of pt thin film in inductive coupled BCl$_{3}$/Cl$_{2}$ plasmas

Platinum thin film which hardly form volatile compounds with any reactive gas at normal process temperature was etched in inductive coupled BCl$_{3}$/Cl$_{2}$ plasma. The etch rate of platinum thin film increased with increasing Cl$_{2}$/(Cl$_{2}$ + BCl$_{3}$) ratio. That reasoned increasing of ion current density.