대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1998년도 하계종합학술대회논문집
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- Pages.339-342
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- 1998
유도 결합형 플라즈마를 이용한 감광제 제거 반응로의 설계
Design of inductively couple dplasma ashing chamber
초록
Plasma etching of photoresist needs high etch rate, good uniformity and rae, good uniformity and low damage in low cost. ICP asher is expected to satisfy these requriement for next eneration semiconductor devices. ICPsimulator has been used to design the ashing chamber to redcue the development time and cost, and its results have been verified by QMS, OES and langmuir probe measurments. Plasma characteristics are monitored in terms of RF power and chamber pressure.
키워드