Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design of inductively couple dplasma ashing chamber

유도 결합형 플라즈마를 이용한 감광제 제거 반응로의 설계

  • 김철식 (인하대학교 전자재료공학과) ;
  • 김철호 (인하대학교 전자재료공학과) ;
  • 이현중 (인하대학교 전자재료공학과) ;
  • 이용규 (인하대학교 전자재료공학과) ;
  • 배경진 (인하대학교 전자재료공학과) ;
  • 이종근 (인하대학교 전자재료공학과) ;
  • 박세근 (인하대학교 전자재료공학과)
  • Published : 1998.06.01
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Abstract

Plasma etching of photoresist needs high etch rate, good uniformity and rae, good uniformity and low damage in low cost. ICP asher is expected to satisfy these requriement for next eneration semiconductor devices. ICPsimulator has been used to design the ashing chamber to redcue the development time and cost, and its results have been verified by QMS, OES and langmuir probe measurments. Plasma characteristics are monitored in terms of RF power and chamber pressure.

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