Characterization of structural and field-emissive properties of diamond films in terms of growth conditions and additive gases

증착변수 및 첨가가스에 따른 다이아몬드 박막의 구조적 물성 및 전계방출 특성의 변화 분석

  • Park, Jae-Hyun (Dept. of Electric, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Lee, Tae-Hoon (Dept. of Electric, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Chang-Kyun (Dept. of Electric, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Seo, Soo-Hyung (Crystal Growth Division, Neosemi-Tech Corp.) ;
  • Park, Jin-Seok (Dept. of Electric, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 박재현 (한양대학교 전자전기제어계측공학과) ;
  • 이태훈 (한양대학교 전자전기제어계측공학과) ;
  • 박창균 (한양대학교 전자전기제어계측공학과) ;
  • 서수형 (네오세미테크(주) 성장사업부) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Published : 2003.07.21

Abstract

Diamond films including nanocystalline and graphite phase are grown by microwave plasma chemical vapor deposition using $N_2$ additives and negative substrate bias at growth step. The microstructure of the films is controlled by changing $N_2$ gas ratio and negative bias. Defects and grain boundaries between diamond and graphite are proposed to be crucial factors for forming the conducting path of electron emissions. The effect of growth parameters on the film microstructure are investigated by Raman spectroscopy and scanning electron microscopy(SEM). Electron emission characteristics are also examined in terms of the film growth conditions.

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